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 To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp. Customer Support Dept. April 1, 2003
Cautions
Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
HD74CBT3257
4-bit 1-of-2 FET Multiplexer / Demultiplexer
ADE-205-624B (Z) Rev. 2 Nov. 2001 Description
The HD74CBT3257 is a 4-bit 1-of-2 high-speed TTL-compatible FET multiplexer / demultiplexer. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. Output enable (OE) and select control (S) inputs select the appropriate B1 and B2 outputs for the A-input data.
Features
* Minimal propagation delay through the switch. * 5 switch connection between two ports. * TTL-compatible input levels. * Ultra low quiescent power. -Ideally suited for notebook applications. * Package type Product code example: HD74CBT3257TELL
Package type TSSOP-16pin Package code TTP-16DA Package suffix T Taping code ELL(2000pcs / Reel)
Notes: 1. As for the Pb-free package is attached the "V" to the end of package code. 2. As for the Pb-free product is attached the "-E" to the end of product code.
HD74CBT3257
Function Table
Inputs OE L L H H: L: X: High level Low level Immaterial S L H X Function A port = B1 port A port = B2 port Disconnect
Pin Arrangement
S 1B1 1B2 1A 2B1 2B2 2A GND
1 2
3
4
5
6
7
8
16 VCC
15 OE
14 4B1
13 4B2
12 4A
11 3B1
10 3B2 9
3A
(Top view)
Rev.2, Nov. 2001, page 2 of 11
HD74CBT3257
Absolute Maximum Ratings
Item Supply voltage range Input voltage range Input clamp current Continuous output current Continuous current through VCC or GND Maximum power dissipation *2 at Ta = 25C (in still air) Storage temperature Notes:
*1
Symbol VCC VI IIK IO ICC or IGND PT Tstg
Ratings -0.5 to 7.0 -0.5 to 7.0 -50 128 100 500 -65 to 150
Unit V V mA mA mA mW C
Conditions
VI < 0 VO = 0 to VCC
TSSOP
The absolute maximum ratings are values which must not individually be exceeded, and furthermore, no two of which may be realized at the same time. 1. The input and output voltage ratings may be exceeded even if the input and output clamp-current ratings are observed. 2. The maximum package power dissipation was calculated using a junction temperature of 150C.
Recommended Operating Conditions
Item Supply voltage range Input voltage range Output voltage range Input transition rise or fall rate Operating free-air temperature Symbol VCC VI VI/O t / v Ta Min 4.0 0 0 0 -40 Max 5.5 5.5 5.5 5 85 Unit V V V ns / V C VCC = 4.5 to 5.5 V Conditions
Note: Unused or floating inputs must be held high or low.
Rev.2, Nov. 2001, page 3 of 11
HD74CBT3257
Block Diagram
1A
4 2
1B1
3
1B2
2A
7
5
2B1
6
2B2
3A
9
11
3B1
10
3B2
4A
12
14
4B1
13
4B2
S
1
OE
15
Rev.2, Nov. 2001, page 4 of 11
HD74CBT3257
DC Electrical Characteristics
(Ta = -40 to 85C)
Item Clamp diode voltage Input voltage Symbol VIK VIH VIL On-state switch *2 resistance RON VCC (V) 4.5 4.0 to 5.5 4.0 to 5.5 4.0 Min 2.0 Typ 14
*1
Max -1.2 0.8 20
Unit V V
Test conditions IIN = -18 mA
VIN = 2.4 V, IIN = 15 mA Typ at VCC = 4.0 V VIN = 0 V, IIN = 64 mA VIN = 0 V, IIN = 30 mA VIN = 2.4 V, IIN = 15 mA
4.5 4.5 4.5 Input current Off-state leakage current Quiescent supply current Increase in ICC *3 per input Notes: IIN IOZ ICC ICC 0 to 5.5 5.5 5.5 5.5

5 5 10
7 7 15 1.0 1.0 3 2.5 A A A mA
VIN = 5.5 V or GND 0 A, B VCC VIN = VCC or GND, IO = 0 mA One input at 3.4 V, other inputs at VCC or GND
For condition shown as Min or Max use the appropriate values under recommended operating conditions. 1. All typical values are at VCC = 5 V (unless otherwise noted), Ta = 25C. 2. Measured by the voltage drop between the A and B terminals at the indicated current through the switch. On-state resistance is determined by the lower voltage of the two (A or B) terminals. 3. This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND.
Capacitance
(Ta = 25C)
Item Control input capacitance Input / output capacitance A port B port Symbol CIN CI/O (OFF) VCC (V) 5.0 5.0 5.0 Min Typ 3.5 9 5 Max Unit pF pF Test conditions VIN = 0 or 3 V VO = 0 or 3 V OE = VCC
Note: This parameter is determined by device characterization is not production tested.
Rev.2, Nov. 2001, page 5 of 11
HD74CBT3257
Switching Characteristics
(Ta = -40 to 85C) * VCC = 4.0 V
Symbol tPLH tPHL tPLH tPHL tZH tZL tHZ tLZ Min Max 0.35 5.5 5.7 5.6 5.2 5.5 5.2 6.4 ns Unit ns ns ns Test conditions CL = 50 pF RL = 500 CL = 50 pF RL = 500 CL = 50 pF RL = 500 CL = 50 pF RL = 500 FROM (Input) A or B S S OE S OE S OE TO (Output) B or A A B A or B B A or B B A or B
Item Propagation delay *1 time Propagation delay time Enable time
Disable time
*
VCC = 5.00.5 V
Symbol tPLH tPHL tPLH tPHL tZH tZL tHZ tLZ Min 1.6 1.6 1.8 1.0 2.2 1.0 2.2 Max 0.25 5.0 5.2 5.1 5.0 5.5 5.0 6.8 ns Unit ns ns ns Test conditions CL = 50 pF RL = 500 CL = 50 pF RL = 500 CL = 50 pF RL = 500 CL = 50 pF RL = 500 FROM (Input) A or B S S OE S OE S OE TO (Output) B or A A B A or B B A or B B A or B
Item Propagation delay *1 time Propagation delay time Enable time
Disable time
Note:
1. The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
Rev.2, Nov. 2001, page 6 of 11
HD74CBT3257
Test Circuit
See under table 500 S1 OPEN GND
*1
CL = 50 pF
500
Load circuit for outputs Symbol t PLH / tPHL t ZH / t HZ t ZL / t LZ S1 OPEN OPEN 7V
Note: 1. CL includes probe and jig capacitance.
Rev.2, Nov. 2001, page 7 of 11
HD74CBT3257
Waveforms - 1
tr 90 % Input 10 %
t PLH
tf
90 % 1.5 V
10 %
t PHL
3V
1.5 V
GND
V OH Output 1.5 V 1.5 V
V OL
Waveforms - 2
tf 90 % Output Control 1.5 V 10 %
t ZL
tr
90 % 1.5 V 10 %
t LZ
3V
GND
3.5 V Waveform - A
1.5 V
V OL + 0.3 V
t ZH
t HZ
V OL V OH
Waveform - B
1.5 V
V OH - 0.3 V
GND
Notes: 1. All input pulses are supplied by generators having the following characteristics : PRR 10 MHz, ZO = 50 , tr 2.5 ns, tf 2.5 ns. 2. Waveform - A is for an output with internal conditions such that the output is low except when disabled by the output control. 3. Waveform - B is for an output with internal conditions such that the output is high except when disabled by the output control. 4. The output are measured one at a time with one transition per measurement.
Rev.2, Nov. 2001, page 8 of 11
HD74CBT3257
Package Dimensions
As of July, 2001
Unit: mm
5.00 5.30 Max 16 9
1
0.08 *0.22 + 0.07 -
8 0.65
1.0
0.20 0.06
0.13 M
0.65 Max
4.40
6.40 0.20 0 - 8 0.50 0.10
*0.17 0.05 0.15 0.04
1.10 Max
0.10
0.07 +0.03 -0.04
*Dimension including the plating thickness Base material dimension
Hitachi Code JEDEC JEITA Mass (reference value)
TTP-16DA -- -- 0.05 g
Rev.2, Nov. 2001, page 9 of 11
HD74CBT3257
As of July, 2001
Unit: mm
5.00 5.30 Max 16 9
1
*0.20 0.05
8 0.65
1.0
0.13 M
0.65 Max
4.40
6.40 0.20 0 - 8 0.50 0.10
*0.15 0.05
1.10 Max
0.10
0.07 +0.03 -0.04
*Pd plating
Hitachi Code JEDEC JEITA Mass (reference value)
TTP-16DAV -- -- 0.05 g
Rev.2, Nov. 2001, page 10 of 11
HD74CBT3257
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk
Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.2, Nov. 2001, page 11 of 11


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